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1 June 1992 Small-field stepper for 193-nm lithography process development
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Abstract
A stepper operating at the 193-nm wavelength has been constructed for use in the development of resist processes. The stepper lens has a 4-mm field diameter and a 0.33 NA. The stepper uses an unnarrowed ArF excimer laser as the light source, and uses diffractive lenslet arrays to transform the low divergence excimer beam into a suitable pupil fill. The stepper is routinely used for resist studies and has been used to pattern lines and spaces as small as 0.15 ?m.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David C. Shaver, David M. Craig, C. A. Marchi, Mark A. Hartney, and Francis N. Goodall "Small-field stepper for 193-nm lithography process development", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130366
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