3 September 1992 Acceptor-related photoluminescence study of GaAs (Ga,Al)As quantum-well wires
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137590
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Acceptor-related photoluminescence spectra are calculated for both homogeneous and on- center spike-doped distribution of acceptors in a cylindrical GaAs-(Ga,Al)As quantum-well wire. Results are dependent on the temperature, on the choice of the quasi-Fermi energy level of the conduction-subband electron gas and on the distribution of acceptors in the wire. The photoluminescence spectra corresponding to a on-center spike-doped Gaussian distribution show a peak for energies associated with on-center impurity states, as it is expected, whereas for a homogeneous distribution of acceptors in the well we essentially found an edge in the spectra associated to transitions involving on-center acceptors and a peaked structure related to the onset of transitions from the conduction subband to on-edge acceptors.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luiz O. Oliveira, Luiz O. Oliveira, A. Latge, A. Latge, Nelson Porras-Montenegro, Nelson Porras-Montenegro, } "Acceptor-related photoluminescence study of GaAs (Ga,Al)As quantum-well wires", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137590; https://doi.org/10.1117/12.137590
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