Effect of electric field, both external and built-in, on GaAs-AlAs structures

Mitra B. Dutta; Hongen Shen; Jagadeesh Pamulapati; Peter G. Newman; Michael A. Stroscio

doi:10.1117/12.137618

3 September 1992 Effect of electric field, both external and built-in, on GaAs-AlAs structures

Mitra B. Dutta, Hongen Shen, Jagadeesh Pamulapati, Peter G. Newman, Michael A. Stroscio

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137618
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Experimental results on GaAs-AlAs multiple quantum wells where the confined electron level is initially delocalized due to the mixing between the (Gamma) and X levels are presented. The applied electric field reduces this coupling and reconfines the electron in the GaAs layer. This causes an increase in oscillator strength and a blue shift of the heavy hole to (Gamma) - electron transition. Reduction of the charge transfer from narrow wells to a wide well has also been observed.

Citation Download Citation

Mitra B. Dutta, Hongen Shen, Jagadeesh Pamulapati, Peter G. Newman, and Michael A. Stroscio "Effect of electric field, both external and built-in, on GaAs-AlAs structures", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137618

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