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3 September 1992 Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137634
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We have studied the electroreflectance and photoreflectance spectra from a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum well (MDQW) structure in the temperature range 79 K < T < 304 K. The features from the InGaAs MDQW can be accounted for on the basis of a two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration (Ns), as well as other important parameters of the structure. Our value for Ns is in good agreement with a Hall measurement. The effect of photo-injected carriers on Ns also was studied.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yichun Yin, Hao Qiang, Fred H. Pollak, Dwight C. Streit, and Michael Wojtowicz "Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137634
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