3 September 1992 Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137584
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The polarization dependent exciton ground state optical absorption in a diffusion induced AlGaAs/GaAs undoped non-square single quantum well has been calculated. The exciton Hamiltonian is expressed in the effective mass approximation using a separable enveloped function to determine both the electron and hole subbands and the 1S-like hydrogenic wavefunction for the coulombic interaction. The k(DOT)p approach is used, assuming a parabolic band without mixing, to obtain the dipole matrix elements, which are then used to determine the TE and TM absorption coefficients.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Herbert Li, E. Herbert Li, Bernard L. Weiss, Bernard L. Weiss, } "Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137584; https://doi.org/10.1117/12.137584
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