3 September 1992 Largely enhanced infrared absorption in a wide InAlAs/InGaAs quantum well and short-period superlattice barrier structure
Author Affiliations +
Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137615
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We report here a detailed study of intersubband absorption at 10.7 micrometers between the localized ground state and the global miniband state in an InAlAs/InGaAs multiple quantum well and short-period superlattice (SL) barrier heterostructure. The use of enlarged quantum well and the superlattice reinforced miniband structure has shown a significant enhancement in the net intersubband absorption. An integrated optical absorption strength of IA equals 19.5 Abs-cm-1 was obtained under the Brewster's incident angle at T equals 300 K, which is about five times larger than that of the conventional single bound-to-bound transition in the InAlAs/InGaAs quantum well structure.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry S. Yu, Sheng S. Li, Pin Ho, "Largely enhanced infrared absorption in a wide InAlAs/InGaAs quantum well and short-period superlattice barrier structure", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137615; https://doi.org/10.1117/12.137615
PROCEEDINGS
5 PAGES


SHARE
Back to Top