3 September 1992 N-i-p-i-based high-speed detectors and bistable switches with gain
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137614
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We report on recent theoretical and experimental results on reverse biased photoconductive detectors and bistable optical switches. Using a special design and taking advantage of the 'giant ambipolar diffusion constant' of n-i-p-i structures, the photogenerated carriers are transferred from the 'absorption area' into a small detection area within very short times. The combination of small contact separations and small RC- and diffusion time constants results in very high gain-bandwidth values with adjustable 3-dB frequencies.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Riel, Peter Kiesel, M. Ennes, Thomas Gabler, Michael Kneissl, Gerhard Boehm, Guenther Traenkle, Guenter Weimann, Karlheinz H. Gulden, X. X. Wu, John Stephen Smith, Gottfried H. Doehler, "N-i-p-i-based high-speed detectors and bistable switches with gain", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137614; https://doi.org/10.1117/12.137614
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