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3 September 1992 Observation of bulk-like LO phonons in GaAs/AlxGa1-xAs superlattices and quantum wells
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137636
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Picosecond pulses are used to measure the hot phonon generation rate ((partial)Nq/(partial)t) of Raman active GaAs LO phonons in several GaAs/AlxGa1-xAs superlattices (SL's) and quantum wells (QW's). Drastic increase in (partial)Nq/(partial)t is observed as the barrier width (Lb) decreased below a critical value for SL's with x >= 0.4. This is interpreted as due to a phonon transition from confinement to propagation. In contrast, for x b's considered. We have also observed the existence of a critical x equals x0 below which the LO phonons are no longer confined. Estimate of the LO phonon penetration depth into the barriers are also obtained for the different x values.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abdellatif Bouchalkha, D. S. Kim, Jin-Joo Song, and John F. Klem "Observation of bulk-like LO phonons in GaAs/AlxGa1-xAs superlattices and quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137636
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