3 September 1992 Optical absorption associated to shallow impurity states in GaAs(Ga,Al)As quantum wells: electric-field effects
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137596
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The optical-absorption spectra associated with transitions between the n equals 1 valence subband and the donor-impurity band and between the acceptor-impurity band and the n equals 1 conduction subband have been calculated for GaAs-(Ga,Al)As quantum-wells under constant applied electric field perpendicular to the interfaces. We have described the impurity states within a variational scheme in the effective-mass approximation. The distribution of impurities in the quantum well has been assumed to be homogeneous and interaction between impurities neglected. As a general feature, the impurity-related optical absorption for finite electric fields exhibits three van Hove-like singularities corresponding to the binding energies associated with impurities at the two edges of the quantum well and at the position at which the binding energy has a maximum.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luiz O. Oliveira, Rosana B. Santiago, and J. d'Albuquerque e Castro "Optical absorption associated to shallow impurity states in GaAs(Ga,Al)As quantum wells: electric-field effects", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137596; https://doi.org/10.1117/12.137596
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