3 September 1992 Optical properties of InP/GaAs/InP strained layers
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137608
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Single layers of GaAs strained to InP have been grown by reduced pressure metal-organic vapor phase epitaxy. Raman spectroscopy along with cathodoluminescence show that the layers are fully strained and consisting of GaAs. The photoluminescence is strong, allowing detailed hydrostatic pressure experiments to be performed. These structures, which are type II at atmospheric pressure, have been transformed to type I structures at high hydrostatic pressure, where the GaAs layer has an indirect conduction band. This transformation is seen as a change in the pressure derivative of the transition energy and a rapid disappearance of the luminescence intensity. We find that the pressure derivative of the valence band offset is less than 1 meV/kbar.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mats-Erik Pistol, Mats-Erik Pistol, Maria Gerling, Maria Gerling, Anders Gustafsson, Anders Gustafsson, Dan Hessman, Dan Hessman, Lars Samuelson, Lars Samuelson, J. O. Fornell, J. O. Fornell, L.-A. Ledebo, L.-A. Ledebo, Werner Seifert, Werner Seifert, } "Optical properties of InP/GaAs/InP strained layers", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137608; https://doi.org/10.1117/12.137608
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