3 September 1992 Optical properties of a type-II GaAs/GaP strained-layer superlattice
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137607
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We studied the optical properties of a type-II (GaAs)6/(GaP)6 strained layer superlattice grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs substrate. The evolution of the photoluminescence peaks as a function of the temperature and excitation power as well as the photoluminescence excitation spectra supported the assignment of the transition involved. For (GaAs)6/(GaP)6, the lowest conduction band is the X level in GaP layers. The energy distance between the X level in GaP layers and the (Gamma) level in GaAs layers is approximately 44 meV. This sample is spatially indirect (type-II) superlattice. We found that the temperature dependence of the photoluminescence spectra is different from other's results.
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Hai-Ping Zhou, Hai-Ping Zhou, Cliva M. Sotomayor-Torres, Cliva M. Sotomayor-Torres, } "Optical properties of a type-II GaAs/GaP strained-layer superlattice", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137607; https://doi.org/10.1117/12.137607
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