3 September 1992 Optically detected cyclotron resonance determination of the in-plane effective mass in Ga0.47In0.53As/InP single quantum wells
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137600
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Measurements of the in-plane electron effective mass in GaInAs/InP single quantum wells as a function of well thickness using far-infrared optically detected cyclotron resonance (FIR- ODCR) is reported. The FIR-ODCR technique is described, the mechanism of detection is explained, and the experimental results are compared with a theoretical calculation. In the thinnest QW investigated (80 angstroms) the in-plane mass is found to increase by about 50% compared to the bulk GaInAs value.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Par Omling, C. Wetzel, Al. L. Efros, P. Sobkowicz, A. Moll, B. K. Meyer, "Optically detected cyclotron resonance determination of the in-plane effective mass in Ga0.47In0.53As/InP single quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137600; https://doi.org/10.1117/12.137600
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