3 September 1992 Pressure dependence of photoluminescence in CdTe/CdMnTe quantum wells
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137609
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The photoluminescence (PL) of CdTe/CdMnTe quantum wells (QWs) with well widths from 20 to 150 angstroms has been investigated as a function of hydrostatic pressure (0 - 37 kbar) at liquid-helium temperature. No band crossovers were observed before the phase transition at approximately 33 kbar. Pressure coefficients of the E(Gamma )1h transitions between the quantized ground levels of the (Gamma) conduction band and the heavy-hole valence band are presented for various well widths. The pressure coefficient is found to increase with decreasing well widths, as in InGaAs/GaAs strained quantum wells but unlike that observed in the GaAs/AlGaAs quantum well system.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hai-Ping Zhou, Hai-Ping Zhou, Cliva M. Sotomayor-Torres, Cliva M. Sotomayor-Torres, B. Lunn, B. Lunn, D. E. Ashenford, D. E. Ashenford, } "Pressure dependence of photoluminescence in CdTe/CdMnTe quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137609; https://doi.org/10.1117/12.137609
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