3 September 1992 Stability of a resonant tunneling diode
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137631
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Space charge build-up in the well is shown to be the cause of the inductive effects in double- barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The corresponding equivalent circuit is made up of two capacitances--related to the charge accumulations in the emitter and in the well--, and two conductances--one for each barrier. The numerical results of this circuit model are in qualitative agreement with experimental data. The success of the earlier quantum inductance model of Brown et al. is explained in terms of the presented model, without the need of introducing such a quantum inductance.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry J. M. F. Noteborn, Harry J. M. F. Noteborn, H. P. Joosten, H. P. Joosten, Daan Lenstra, Daan Lenstra, K. Kaski, K. Kaski, } "Stability of a resonant tunneling diode", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137631; https://doi.org/10.1117/12.137631
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