3 September 1992 Strong intersubband absorption by photogenerated carriers in quantum wells
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137616
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Intersubband absorption spectra in the 10-micrometers region are measured between 4.2 and 290 K in four n-type GaAs/Al0.28Ga0.72As multiple-quantum-well samples. The carriers responsible for the absorption are generated by a cross-gap pump laser operating at 0.75 micrometers . The absorption strength per unit pump power is found to depend strongly on the background electron sheet density (sigma) B, and is greatest by far in a sample having (sigma) B approximately equals 4 X 1010 cm-2. By measuring the speed of response, the cause of the strong photoabsorption is found to be a long photoelectron lifetime. The sample with the strongest photoabsorption is used to make an efficient CO2-laser modulator.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elliott R. Brown, Elliott R. Brown, K. Alexander McIntosh, K. Alexander McIntosh, Kirby B. Nichols, Kirby B. Nichols, } "Strong intersubband absorption by photogenerated carriers in quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137616; https://doi.org/10.1117/12.137616
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