3 September 1992 Subband states and optical properties of a strained nonsquare quantum well
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137610
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
An error function is used to model the compositional profile in an undoped InGaAs/GaAs single quantum well after disordering. Calculation of the subband structure, interband transition energies, overlapping wavefunction and polarization dependent interband absorption coefficient are presented for various stages of disordering. It is shown that the combined effects of strain and disordering in quantum well structures can be used to tailor the absorption edge.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph Micallef, Joseph Micallef, E. Herbert Li, E. Herbert Li, Kin Sang Chan, Kin Sang Chan, Bernard L. Weiss, Bernard L. Weiss, } "Subband states and optical properties of a strained nonsquare quantum well", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137610; https://doi.org/10.1117/12.137610
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