3 September 1992 Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1-xAs/GaAs (x>0.36) single quantum wells
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Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137628
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The critical layer thickness (CLT), based on the transition from two dimensional to three dimensional (3D) growth, was investigated by the use of photoluminescence in highly strained InxGa1-xAs/GaAs (0.36
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Wang, S. M. Wang, Thorvald G. Andersson, Thorvald G. Andersson, M. J. Ekenstedt, M. J. Ekenstedt, } "Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1-xAs/GaAs (x>0.36) single quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137628; https://doi.org/10.1117/12.137628
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