2 September 1992 Atomic-layer epitaxy of device-quality Al0.3Ga0.7As
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We report on the recent growth by Atomic Layer Epitaxy (ALE) of device quality Al0.3Ga0.7As in a modified commercial reactor. A standard Emcore reactor was altered by the installation of baffles to prevent mixing of the reactant gas streams and a computer controlled servo motor to allow for a nonlinear rotation cycle. By varying the V/III ratio and the exposure time to the reactant gases it is possible to control the background carbon doping from high resistivity to p equals 1 X 1020 cm-3, without the need for an additional p-type source. Since low background doping was also achieved, silane was used to obtain n-type Al0.3Ga0.7As as high as n equals 1 X 1018 cm-3. The room temperature Hall mobility of the n-type Al0.3Ga0.7As films varied from 1200 to 3700 cm2/V(DOT)sec. Photoluminescence and preliminary doping results are presented and discussed.
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Anthony Dip, Peter C. Colter, G. M. Eldallal, Salah M. Bedair, "Atomic-layer epitaxy of device-quality Al0.3Ga0.7As", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137644; https://doi.org/10.1117/12.137644

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