2 September 1992 Atomic-layer epitaxy of device-quality Al0.3Ga0.7As
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We report on the recent growth by Atomic Layer Epitaxy (ALE) of device quality Al0.3Ga0.7As in a modified commercial reactor. A standard Emcore reactor was altered by the installation of baffles to prevent mixing of the reactant gas streams and a computer controlled servo motor to allow for a nonlinear rotation cycle. By varying the V/III ratio and the exposure time to the reactant gases it is possible to control the background carbon doping from high resistivity to p equals 1 X 1020 cm-3, without the need for an additional p-type source. Since low background doping was also achieved, silane was used to obtain n-type Al0.3Ga0.7As as high as n equals 1 X 1018 cm-3. The room temperature Hall mobility of the n-type Al0.3Ga0.7As films varied from 1200 to 3700 cm2/V(DOT)sec. Photoluminescence and preliminary doping results are presented and discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Dip, Anthony Dip, Peter C. Colter, Peter C. Colter, G. M. Eldallal, G. M. Eldallal, Salah M. Bedair, Salah M. Bedair, } "Atomic-layer epitaxy of device-quality Al0.3Ga0.7As", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137644; https://doi.org/10.1117/12.137644


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