2 September 1992 Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates
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Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.137650
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
A single-step metal organic chemical vapor deposition (MOCVD) growth has been used to fabricate a buried heterostructure InGaAs/GaAs multi-quantum well laser over a patterned GaAs substrate. The pattern used here is a re-entrant mesa formed by wet chemical etching oriented along [011] direction. Growth over the mesa results in isolated buried heterostructures. The 250 micrometers long lasers have threshold currents of 30 mA and emit > 100 mW/facet at room temperature. The external differential quantum efficiency is found to be almost independent of temperature in the temperature range of 10 degree(s)C to 90 degree(s)C which suggests a low temperature dependence of leakage current. The threshold current of the laser as a function of temperature can be represented by the usual expression Ith approximately Io exp(T/To) with a characteristic temperature (To) of about 120 K in the temperature range 10 degree(s)C to 90 degree(s)C.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Lopata, Niloy K. Dutta, William S. Hobson, Paul Raymond Berger, "Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137650; https://doi.org/10.1117/12.137650
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KEYWORDS
Heterojunctions

Metalorganic chemical vapor deposition

Gallium arsenide

Semiconducting wafers

Semiconductor lasers

Temperature metrology

Erbium lasers

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