Direct electron-beam patterning on a nanometer scale of CaF2 layers grown by MBE on silicon <111>

Richard Zanetti; J. H. Paterson; G. A.C. Jones; King-Ning N. Tu; L. M. Brown

doi:10.1117/12.137664

2 September 1992 Direct electron-beam patterning on a nanometer scale of CaF₂ layers grown by MBE on silicon <111>

Richard Zanetti, J. H. Paterson, G. A.C. Jones, King-Ning N. Tu, L. M. Brown

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137664
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

MBE grown calcium fluoride has been directly patterned using an 100 keV electron beam. An array of dots 4 nm in diameter with a period of 15 nm and lines 7 nm wide are reported. The dependence of the damage process on beam current showed that there is a simple dose requirement of 9 X 10³ C.cm^-2, which corresponds to 5 X 10⁸ e^-nm^-2. Complete holes were not observed. Electron energy loss spectroscopy studies indicate that fluorine has been removed and metallic calcium is left in the damaged region. The damage process was studied with the sample orientated along the <111> direction and tilted away from this axis by up to 10 degrees. No orientation dependence in the hole size or dose required was observed.

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Richard Zanetti, J. H. Paterson, G. A.C. Jones, King-Ning N. Tu, and L. M. Brown "Direct electron-beam patterning on a nanometer scale of CaF₂ layers grown by MBE on silicon <111>", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137664

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