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2 September 1992 Dry-etching process for the fabrication of optoelectronic gratings in III-V substrates
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Abstract
We report a novel, three-step dry etching process for the fabrication of first-order diffraction gratings in III - V semiconductors. The process takes advantage of the etching of thin films of SiO2 and an organosilicon electron-beam resist (poly(3-butenyltrimethylsilane sulfone)) by the H2/CH4 plasma that is used to etch InP and its alloys. The new method significantly reduces wafer handling and eliminates the wet resist stripping step. The gratings were imaged with a scanning tunneling microscope.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoni S. Gozdz, John A. Shelburne III, Chuan C. Chang, and R. S. Robinson "Dry-etching process for the fabrication of optoelectronic gratings in III-V substrates", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137662
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