Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance

Manijeh Razeghi; Daniel Yang; James W. Garland; Zhijie Zhang; Dazhong Xue

doi:10.1117/12.137652

2 September 1992 Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance

Manijeh Razeghi, Daniel Yang, James W. Garland, Zhijie Zhang, Dazhong Xue

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137652
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We report the first band offset measurement of GaAs/Ga_0.51In_0.49P multiquantum wells and superlattices by electrolyte electroreflectance spectroscopy. The conduction and valence band discontinuities (Delta) E_c equals 159 +/- 4 meV and (Delta) E_v equals 388 +/- 6 meV have been measured. The values found for the conduction band, heavy-hole and light-hole masses in the GaInP barriers and GaAs wells and for the split-off well mass are in excellent agreement with the literature. The intraband, intersubband transition energies, which are important for III - V infrared detection devices, also were directly measured.

Citation Download Citation

Manijeh Razeghi, Daniel Yang, James W. Garland, Zhijie Zhang, and Dazhong Xue "Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137652

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