2 September 1992 Fabrication and imaging of quantum-well wire structures
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Abstract
Quantum well wire structures in metalorganic vapor phase epitaxy (MOVPE) grown Ga.53In.47As/InP and in Ga.85In.15As/GaAs have been fabricated by electron beam lithography and subsequent metalorganic reactive ion etching (MORIE) and/or wet etching. The dry etching was optimized for low-damage conditions and for mask-to-wafer pattern transfer. In the wet etching process, an underetching was implemented in order to reduce the linewidth defined by the etching mask. A wet etching step has been used after the dry etching for removal of the partly damaged surface region and for smoothing of the sidewalls of the wires. Differently processed areas were excited selectively by low- temperature cathodoluminescence (CL) from which the optical quality of the wire material was evaluated and blue shifts for the wires as large as 10 meV were observed. Individual wires have also been imaged and effects of one-dimensional exciton diffusion have been probed.
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Lars Samuelson, Kristina Georgsson, Anders Gustafsson, Ivan Maximov, Lars Montelius, Stefan Nilsson, Werner Seifert, Allen Semu, "Fabrication and imaging of quantum-well wire structures", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137655; https://doi.org/10.1117/12.137655
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