2 September 1992 GaAs atomic-layer epitaxy in a rotating disc reactor
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Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.142660
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Current difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Alternate zones either supply source gas or mask the wafer from exposure to source gases. If the barrier is positioned 0.5 - 2 mm from the wafer carrier, it can efficiently shear off the boundary layer and thereby reduce gas phase reactions. The substrate, continuously rotating beneath the barrier, is alternately exposed to group III and group V sources. The result is that process times are significantly reduced. Initial results have shown a saturated growth rate of up to 0.35 micrometers /hour at 525 degree(s)C and a relatively wide process window. Thickness uniformity of +/- 1% over 85% of a 2 inch wafer has been obtained.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heng Liu, Peter A. Zawadzki, Peter E. Norris, "GaAs atomic-layer epitaxy in a rotating disc reactor", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.142660; http://dx.doi.org/10.1117/12.142660
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KEYWORDS
Semiconducting wafers

Focus stacking software

Gallium arsenide

Epitaxy

Gallium

Switching

Gases

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