2 September 1992 In-situ x-ray studies of OMVPE growth
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Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.137660
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
This paper summarizes recent in situ x-ray analyses of the growth of GaAs by organometallic vapor phase epitaxy (OMVPE). This growth was carried out using tertiarybutylarsine (TBAs) and trimethylgallium (TMG) as the source materials. Examples of in situ x-ray measurements are given including x-ray absorption studies of gas phase behavior and x-ray scattering studies of layer-by-layer growth.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul H. Fuoss, Frank J. Lamelas, P. Imperatori, David W. Kisker, G. Brian Stephenson, Sean Brennan, "In-situ x-ray studies of OMVPE growth", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137660; http://dx.doi.org/10.1117/12.137660
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KEYWORDS
X-rays

Scattering

Absorption

Gallium arsenide

Laser scattering

X-ray fluorescence spectroscopy

Arsenic

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