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2 September 1992 MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their application in fabricating visible lasers
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Abstract
We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattices (SPSs) quantum well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 ML of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad area threshold current density, Jth, for 500 micrometers long lasers is 510 A cm-2. The 500 micrometers -long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19 to 60 degree(s)C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naresh Chand, Niloy K. Dutta, John Lopata, Robert Hull, and Michael Geva "MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their application in fabricating visible lasers", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137654
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