2 September 1992 Monte Carlo simulation of a "true" quantum wire
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Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.137656
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We present a Monte Carlo analysis of a `true' GaAs-based quantum wire, whose dimensions correspond to present state-of-the-art technology. Intrasubband and intersubband scattering rates for the electron-polar optical phonon interaction are included in the simulation as well as electron-electron interaction. We have studied the nonequilibrium transport characteristics of the one-dimensional system in two different situations: the response of the electron gas to an external electric field applied along the wire direction, and the cooling dynamics following laser photoexcitation. With respect to 3-D and 2-D systems, we can show that the electron- phonon interaction is not substantially modified, while a strong reduction in the electron- electron scattering rate of the wire is found.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lucio Rota, F. Rossi, Paolo Lugli, Elisa Molinari, Stephen M. Goodnick, Wolfgang Porod, "Monte Carlo simulation of a "true" quantum wire", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137656; http://dx.doi.org/10.1117/12.137656
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KEYWORDS
Scattering

Monte Carlo methods

Phonons

Computer simulations

Gallium arsenide

Laser scattering

Solids

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