2 September 1992 Ordered-disordered ternary III-V semiconductor alloys
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Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.137642
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Ternary III - V semiconductor alloys show ordering specially when they grow lattice matched to a substrate. The ordered ternary alloys have different crystal structures and bandgaps from their corresponding disordered ones. We review the advantages of growing these ordered alloys. We also report on our efforts to grow the ordered alloys by the atomic layer epitaxy technique.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. A. El-Masry, "Ordered-disordered ternary III-V semiconductor alloys", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137642; https://doi.org/10.1117/12.137642
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KEYWORDS
Focus stacking software

Crystals

Chemical species

Semiconductors

Metalorganic chemical vapor deposition

Diffraction

Epitaxy

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