2 September 1992 Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates
Author Affiliations +
Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.137646
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We review a new molecular beam epitaxy (MBE) technique we call cleaved edge overgrowth (CEO), which makes possible fabrication of quantum wires or other lower dimensional quantum structures with atomic precision. CEO is accomplished by performing two separate MBE overgrowths separated by an in situ cleave of the substrate sample. We review our development of this novel method and give three examples of new structures recently fabricated using it.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Loren N. Pfeiffer, H. L. Stormer, Alejandro R. Goni, A. Pinczuk, Kirk W. Baldwin, Kenneth W. West, "Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137646; http://dx.doi.org/10.1117/12.137646
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Gallium arsenide

Quantum wells

Modulation

Superlattices

Luminescence

Semiconducting wafers

Magnetism

Back to Top