Structural and optical properties of strained In0.2Ga0.8As-GaAs quantum wells

Moses T. Asom; Lars C. Luther; Gabriela Livescu; Venkat S. Swaminathan; Sung-Nee G. Chu

doi:10.1117/12.137649

2 September 1992 Structural and optical properties of strained In_0.2Ga_0.8As-GaAs quantum wells

Moses T. Asom, Lars C. Luther, Gabriela Livescu, Venkat S. Swaminathan, Sung-Nee G. Chu

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137649
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We report on Molecular Beam Epitaxial growth and properties of strained In_0.2Ga_0.8As-GaAs quantum well (QW) structures suitable for 980 nm lasers. The QW width was maintained at 80 A and the barrier thickness was varied from 50 A to 300 A. The effects of increasing the barrier width on the structural and optical properties of the QW were examined using double crystal x-ray diffraction rocking scans (DCXRD) and photoluminescence measurements. DCXRD rocking scans revealed satellite peaks from the strained layer quantum wells (SLQW). The linewidth of the peaks decreased as the barrier width was increased. Optical measurements indicate significant improvements in the internal luminescence efficiency in the thick barrier structures. We assign the improvements in the luminescence properties to the reduction of non-radiative centers in the thick barrier structures. The sources of the non-radiative centers are ascribed to structural defects that are generated as a result of strain relaxation in the thin barrier structures. A new broad photoluminescence feature at 0.9 eV was also observed and believed to originate in the AlGaAs:Si cladding region. We shall present these results and discuss the implications of increasing the barrier thickness of In_0.2Ga_0.8As-GaAs QW on the performance of 980 nm lasers.

Citation Download Citation

Moses T. Asom, Lars C. Luther, Gabriela Livescu, Venkat S. Swaminathan, and Sung-Nee G. Chu "Structural and optical properties of strained In_0.2Ga_0.8As-GaAs quantum wells", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137649

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available