2 September 1992 Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation
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Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992); doi: 10.1117/12.137658
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marleen Van Hove, "Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137658; https://doi.org/10.1117/12.137658
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KEYWORDS
Diodes

Gallium arsenide

Plasma

Heterojunctions

Hydrogen

Nanostructures

Quantum wells

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