Paper
21 October 1992 Ensemble Monte Carlo simulation of femtosecond photoexcitation in AlGaAs
Selim E. Guencer, David K. Ferry
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Abstract
Femtosecond photoexcitation experiments have been used by many groups to investigate ultrafast scattering processes in semiconductors. Information on intervalley scattering rates can readily be deduced by monitoring valley populations in real time, and particularly, a number of groups have made measurements for (Gamma) -L and (Gamma) -X intervalley scattering in GaAs. However, due to the direct gap, the L-X scattering in GaAs can not be directly monitored. Recently, experiments to monitor the X valley population in indirect AlGaAs have been performed, and utilized to set up an upper bound for the L-X scattering lifetime. We have used an ensemble Monte Carlo (EMC) technique to calculate the evolution of valley populations in indirect AlGaAs illuminated by a femtosecond pulse laser. The time evolution of electron populations in the (Gamma) , L and X valleys is studied by varying the intervalley coupling constants. The L-X intervalley deformation potential is found to be DXL equals 1.5 +/- 0.5 X 108 eV/cm.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Selim E. Guencer and David K. Ferry "Ensemble Monte Carlo simulation of femtosecond photoexcitation in AlGaAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137697
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KEYWORDS
Scattering

Phonons

Monte Carlo methods

Femtosecond phenomena

Gallium arsenide

Computer simulations

Dielectrics

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