21 October 1992 Femtosecond dynamics of hot carriers in GaAs
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Abstract
The pump-probe technique is used to perform a series of measurements on intrinsic GaAs samples at room temperature with a temporal resolution of 75 - 100 fs. Changes of both absorption coefficient and refractive index are measured over a wide spectral region (550 - 950 nm) for various carrier densities (<1016 to 1019 cm-3) injected at 2 eV. These measurements provide insight on the fundamental properties of nonequilibrium carriers, including electron-electron scattering, electron-hole scattering, electron-phonon scattering, hole-phonon scattering, band-gap renormalization, plasma screening of Coulomb interactions, and free-carrier absorption.
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Philippe M. Fauchet, Philippe M. Fauchet, Ting Gong, Ting Gong, } "Femtosecond dynamics of hot carriers in GaAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137694; https://doi.org/10.1117/12.137694
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