21 October 1992 Femtosecond dynamics of hot carriers in GaAs
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Abstract
The pump-probe technique is used to perform a series of measurements on intrinsic GaAs samples at room temperature with a temporal resolution of 75 - 100 fs. Changes of both absorption coefficient and refractive index are measured over a wide spectral region (550 - 950 nm) for various carrier densities (<1016 to 1019 cm-3) injected at 2 eV. These measurements provide insight on the fundamental properties of nonequilibrium carriers, including electron-electron scattering, electron-hole scattering, electron-phonon scattering, hole-phonon scattering, band-gap renormalization, plasma screening of Coulomb interactions, and free-carrier absorption.
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Philippe M. Fauchet, Philippe M. Fauchet, Ting Gong, Ting Gong, "Femtosecond dynamics of hot carriers in GaAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137694; https://doi.org/10.1117/12.137694
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