21 October 1992 Hot photoexcited electrons and exciton kinetics in GaAs
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Abstract
Exciton-polariton photoluminescence kinetics under short-pulse excitation in pure epitaxial GaAs has been investigated. The observed delayed onset of the polariton luminescence is attributed to the energy relaxation of polaritons and photoexcited electrons. The electron energy relaxation is controlled by inelastic impurity scattering. In an ultrapure sample (ND approximately 1012 cm-3) the maximum of luminescence is reached after a considerable delay of 4 ns. At high repetition rate the next excitation pulse causes a fast quenching of polariton luminescence in the vicinity of exciton resonance due to heating of excitons by photoexcited hot electrons. A model of exciton luminescence kinetics involving exciton-electron interaction has been proposed.
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Jaak Aaviksoo, I. Reimand, Victor V. Rossin, V. V. Travnikov, "Hot photoexcited electrons and exciton kinetics in GaAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137683; https://doi.org/10.1117/12.137683
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