21 October 1992 Ultrafast internal thermalization of photoexcited carriers in polar semiconductors
Author Affiliations +
Abstract
We present a combined experimental and theoretical study of the ultrafast internal thermalization of high energy carriers created by laser excitation. Luminescence up-conversion is used to monitor the spectral and temporal evolution of the photoexcited carrier distributions with a time resolution of about 100 fs. A Monte Carlo simulation joined with a molecular dynamics approach is then used to interpret the experimental results. We show that the coulomb interaction among carriers is responsible for the initial ultrafast thermalization. The simulation allow us to distinguish between binary carrier-carrier collisions and plasmon losses and reconcile the results obtained with time resolved vs. c.w. hot (e, angstroms) luminescence.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lucio Rota, Lucio Rota, Paolo Lugli, Paolo Lugli, Thomas Elsaesser, Thomas Elsaesser, Jagdeep Shah, Jagdeep Shah, } "Ultrafast internal thermalization of photoexcited carriers in polar semiconductors", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137678; https://doi.org/10.1117/12.137678
PROCEEDINGS
11 PAGES


SHARE
Back to Top