Ultrafast thermal nonlinearities in amorphous silicon

Philippe M. Fauchet; Daniele Hulin; A. Mourchid; Regis Vanderhaghen

doi:10.1117/12.137681

21 October 1992 Ultrafast thermal nonlinearities in amorphous silicon

Philippe M. Fauchet, Daniele Hulin, A. Mourchid, Regis Vanderhaghen

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137681
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We report the observation in a-Si:H of a large thermal nonlinearity with a picosecond response time. The spectral dependence of the refractive and absorptive parts of this unusually fast thermal nonlinearity reveals that it arises from a picosecond nonradiative recombination of electrons and holes across the band gap. The optical and electronic processes that make this thermal nonlinearity possible and observable are discussed.

Citation Download Citation

Philippe M. Fauchet, Daniele Hulin, A. Mourchid, and Regis Vanderhaghen "Ultrafast thermal nonlinearities in amorphous silicon", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137681

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