21 October 1992 Ultrafast thermal nonlinearities in amorphous silicon
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We report the observation in a-Si:H of a large thermal nonlinearity with a picosecond response time. The spectral dependence of the refractive and absorptive parts of this unusually fast thermal nonlinearity reveals that it arises from a picosecond nonradiative recombination of electrons and holes across the band gap. The optical and electronic processes that make this thermal nonlinearity possible and observable are discussed.
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Philippe M. Fauchet, Philippe M. Fauchet, Daniele Hulin, Daniele Hulin, A. Mourchid, A. Mourchid, Regis Vanderhaghen, Regis Vanderhaghen, } "Ultrafast thermal nonlinearities in amorphous silicon", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137681; https://doi.org/10.1117/12.137681

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