1 July 1992 Dielectric functions and critical point transitions of single strained and relaxed InxGa1-xAs/GaAs epilayers studied by spectroscopic ellipsometry and photoreflectance
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Abstract
Dielectric functions of strained InxGa1-xAs (x approximately 0.1, 0.2, 0.24) measured by spectroscopic ellipsometry are presented for the first time. Critical point transition energies obtained from differential spectra are correlated with photoreflectance measurements to provide information on layer thickness, composition, and strain.
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Roger Timothy Carline, Roger Timothy Carline, Christopher Pickering, Christopher Pickering, N. S. Garawal, N. S. Garawal, David Lancefield, David Lancefield, Leslie K. Howard, Leslie K. Howard, M. T. Emeny, M. T. Emeny, } "Dielectric functions and critical point transitions of single strained and relaxed InxGa1-xAs/GaAs epilayers studied by spectroscopic ellipsometry and photoreflectance", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60463; https://doi.org/10.1117/12.60463
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