1 July 1992 Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs
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Abstract
The Fermi level position in low temperature (LT) GaAs is studied by photoreflectance (PR). The experiments show that the Fermi level in both the as-grown and the annealed LT-GaAs is firmly pinned, however, the pinning position occurs at different energies: 0.47 eV below the conduction band edge for the as-grown samples and 0.65 eV below the conduction band edge for the annealed samples. The pinning in the as-grown LT-GaAs is the result of a high degree of charge compensation of deep levels, while the pinning in the annealed LT-GaAs is due to the depletion of carriers by the Schottky barrier at the metallic As precipitates. From the measured Fermi level and ionization ratio of As antisites, the (0/+) donor level of the As antisite is found to be at Ec - 0.57 eV.
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Hongen Shen, Hongen Shen, Jagadeesh Pamulapati, Jagadeesh Pamulapati, Robert A. Lux, Robert A. Lux, Mitra B. Dutta, Mitra B. Dutta, F. C. Rong, F. C. Rong, Monica Alba Taysing-Lara, Monica Alba Taysing-Lara, L. Fotiadis, L. Fotiadis, L. Calderon, L. Calderon, Yicheng Lu, Yicheng Lu, "Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60458; https://doi.org/10.1117/12.60458
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