1 July 1992 Luminescence properties of Al0.48In0.52As under hydrostatic pressure
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Abstract
The low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectra characteristics of Al0.48In0.52As have been studied under high pressure from 1 bar up to 92 kbar. We have obtained, for the first time, the (Gamma) -(Chi) crossover critical pressure Pc (approximately 52.5 +/- 0.5 kbar), the linear pressure coefficients (alpha) (Gamma ) and (alpha) (Chi ) (7.9 meV/kbar and -2.9 meV/kbar, respectively) at helium temperature. By measuring temperature and excitation intensity dependences of the PL spectra together with the PLE spectra, we have demonstrated that the low-temperature luminescence of the Al0.48In0.52As is not excitonic but due to (D degree(s), A degree(s))transitions with a relatively deep acceptor of 68 meV, which occurs in both the direct- and indirect-band gap. We suggest that the shallow donor ground state associated with the (Chi) - and (Gamma) -conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the direct-indirect crossover seem to be minor.
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Hai-Ping Zhou, Hai-Ping Zhou, Cliva M. Sotomayor-Torres, Cliva M. Sotomayor-Torres, } "Luminescence properties of Al0.48In0.52As under hydrostatic pressure", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60445; https://doi.org/10.1117/12.60445
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