1 July 1992 Optical studies of interface roughness in GaAs/AlAs quantum-well structures (Invited Paper)
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Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992); doi: 10.1117/12.60441
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We review our photoluminescence results concerning the structural disorder of the interfaces in GaAs/AlAs quantum well structures. In the highest quality samples structural disorder exists as monolayer—high islands. We show the types of possible luminescence spectra which can occur in quantum wells in which the bottom and top interfaces have differently-sized islands. It is shown how luminescence spectra are sensitive to both large and small island structures —whether they occur on the same interface or occur separately on the top and bottom interfaces.
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Daniel G. Gammon, Benjamin V. Shanabrook, D. Scott Katzer, "Optical studies of interface roughness in GaAs/AlAs quantum-well structures (Invited Paper)", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60441; https://doi.org/10.1117/12.60441
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KEYWORDS
Excitons

Quantum wells

Iterated function systems

Luminescence

Interfaces

Gallium arsenide

Aluminum

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