1 July 1992 Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation
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Abstract
Raman scattering and low temperature photoluminescence (PL) have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted multiple quantum well (MQW) structures. Lattice damage induced by both CIB and FIB implantation is studied by analyzing the peak position and the lineshape of the Raman spectra. CIB and FIB induced lattice damage was similar at lower doses, but for the highest dose the FIB induced significantly larger damage. Following implantation and rapid thermal annealing, all samples are compositionally mixed. PL spectra suggest that CIB and FIB implanted samples with the lowest dose behave in a manner similar to a lightly compensated semiconductor.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Howard E. Jackson, Ahn Goo Choo, Bernard L. Weiss, Joseph T. Boyd, Andrew J. Steckl, Peter Chen, Robert D. Burnham, Stephen C. Smith, "Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60451; https://doi.org/10.1117/12.60451
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