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1 July 1992 Raman scattering characterization of processing effects on GaAs planar photoconductors
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Abstract
Raman scattering has been used to probe the effects of both chemical and plasma etching on the photosensitive area of GaAs planar photoconductors, and also to examine the stress at a Si3N4 film/n-doped GaAs interface. Electrical performance on the photoconductors has been measured and then correlated to the Raman results. As expected, increasing the number of processes leads to slightly poorer electrical performance.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Monique T. Constant, A. Bellarbi, A. Lorriaux, and Bertrand Grimbert "Raman scattering characterization of processing effects on GaAs planar photoconductors", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60449
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