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1 July 1992 Raman scattering in InxGa1-x As/GaAs superlattices grown by molecular-beam epitaxy
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Abstract
The pseudomorphic GaAs/InxGa1-xAs structures are of particular interest because of the high value of the InxGa1-xAs electron mobility and the good electron confinement in the ternary alloy. Raman scattering experiments were carried out to measure the optical lattice modes of a series of GaAs/InxGa1-xAs strained- layer superlattices grown by molecular beam epitaxy on (001) surface of GaAs substrates. The frequency shifts between commensurate and incommensurate layers give a quantitative determination of strain in each type of the strained layers. For this purpose, we have also measured the Raman phonon frequencies of bulk InxGa1-1As alloy samples upon a large scale of composition. Double crystal x-ray rocking curve (XRC) data on superlattices are compared to those of Raman experiments. This allows a more valid estimation of the obtained results.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Monique T. Constant, N. Matrullo, A. Lorriaux, R. Fauquembergue, and Y. Druelle "Raman scattering in InxGa1-x As/GaAs superlattices grown by molecular-beam epitaxy", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60448
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