Raman spectroscopy of delta-doped GaAs layers and wires (Invited Paper)

Joachim Wagner

doi:10.1117/12.60446

1 July 1992 Raman spectroscopy of δ-doped GaAs layers and wires (Invited Paper)

Joachim Wagner

Author Affiliations +

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60446
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Raman spectroscopy is used to study the incorporation of Si in (delta) -doped GaAs layers via light scattering by local vibrational modes. This includes the analysis of Si monolayers embedded in GaAs. Raman scattering by excitations of the two-dimensional electron gas in (delta) -doped GaAs gives information on the subbands formed by the space charge induced potential well. In addition, the effect of additional lateral confinement on these subbands can be studied.

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Joachim Wagner "Raman spectroscopy of δ-doped GaAs layers and wires (Invited Paper)", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60446

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