1 July 1992 Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well
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Abstract
The photoreflectance lineshape of the 11H exciton peak in an In0.21Ga0.79As/GaAs single quantum well was measured from 10 K to 500 K. In contrast to the GaAs/GaAlAs system our 10 K data exhibited no `wings' and can be fit equally well by the first-derivative of a Gaussian or Lorentzian profile. The former is probably relevant since the well material is an alloy. These results indicate that care must be taken in associating spectra without pronounced `wings' with the Lorentzian profile. The temperature dependence of the 11H linewidth, which has been fit to a Bose-Einstein expression, yields important information about the quality of the material and interface. The variation of the energy of 11H with temperature agrees with that of bulk material.
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Hao Qiang, Hao Qiang, Yufei S. Huang, Yufei S. Huang, Fred H. Pollak, Fred H. Pollak, G. D. Pettit, G. D. Pettit, Jerry M. Woodall, Jerry M. Woodall, } "Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60453; https://doi.org/10.1117/12.60453
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