1 July 1992 Approximate reflection algorithms
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Proceedings Volume 1679, Physics and Simulation of Optoelectronic Devices; (1992); doi: 10.1117/12.60474
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
We review our photoluminescence results concerning the structural disorder of the interfaces in GaAs/AlAs quantum well structures. In the highest quality samples structural disorder exists as monolayer—high islands. We show the types of possible luminescence spectra which can occur in quantum wells in which the bottom and top interfaces have differently-sized islands. It is shown how luminescence spectra are sensitive to both large and small island structures —whether they occur on the same interface or occur separately on the top and bottom interfaces.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Witold Bardyszewski, David Yevick, Moses Glasner, Bjorn Hermansson, "Approximate reflection algorithms", Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60474; https://doi.org/10.1117/12.60474
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KEYWORDS
Refractive index

Interfaces

Wave propagation

Physics

Optoelectronic devices

Lithium

Matrices

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