Theoretical and experimental results for a quantum-well resonant cavity phototransistor

Sonu L. Daryanani; Geoffrey W. Taylor

doi:10.1117/12.60487

1 July 1992 Theoretical and experimental results for a quantum-well resonant cavity phototransistor

Sonu L. Daryanani, Geoffrey W. Taylor

Proceedings Volume 1679, Physics and Simulation of Optoelectronic Devices; (1992) https://doi.org/10.1117/12.60487
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

A quantum well resonant cavity structure is modelled using energy balance considerations by computing the Poynting vectors across the absorbing region. The quantum efficiency (eta) is shown to yield terms that depend on the Q of the cavity, the position of the quantum wells in the structure, and the relative reflectivities of the two stacks at either end of the cavity. The bandwidth B.W. of the detector on the other hand depends only on the cavity Q. Thus an optimum (eta) X B.W. product can be found. Experimental results corroborate the model.

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Sonu L. Daryanani and Geoffrey W. Taylor "Theoretical and experimental results for a quantum-well resonant cavity phototransistor", Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); https://doi.org/10.1117/12.60487

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